Siddharth Rajan Thesis

Ganguly, “Ab-initio Study of Ni Ge/Ge Schottky Contact”, Journal of Applied Physics 121 (14), 145701 (2017).

Lodha, “Enhanced thermal stability of Ti/Ti O2/n-Ge contacts through plasma nitridation of Ti O2 interfacial layer”, Applied Physics Letters, 110, 052104 (2017).

Lodha, “Plasma-assisted As Implants For Effective Work Function Modulation of Ti N/Hf O2 Gate Stacks on Germanium”, Applied Physics Letters, 112 (20), 203503 (2018).

“Delta doped β-Ga2O3Field Effect Transistors with Regrown Ohmic Contacts”, IEEE Electron Device Letters, vol.

Lodha, “Contacts on n-type Germanium using variably doped Zn O and highly doped ITO interfacial layers”, Applied Physics Express, vol.

Lodha, “Enhanced Ge n /p Junction Performance Using Cryogenic Phosphorous Implantation”, IEEE Transactions on Electron Devices 62 (1),69 (2015). Neumann-Spallart, “Optimization of a plasma immersion ion implantation process for shallow junctions in silicon”, Journal of Vacuum Science & Technology A 32 (6), 061302 (2014). Kumar,”Solution Processed Poly(3,4-ethylenedioxythiophene) thin films as transparent Conductor: Effect of p-Toluenesulphonic Acid in Dimethyl Sulfoxide”, ACS Applied Materials & Interfaces, 6 (20), 17792–17803 (2014). Lodha “Accurate Threshold Voltage Reliability Evaluation of Thin Al Top Gate Dielectric Black Phosphorous FETs Using Ultrafast Measurement Pulses”, in ACS Applied Materials and Interfaces, 11, 26, 23673-23680, 2019. Rajan, “Breakdown characteristics of β-(Al field-plated modulation doped field effect transistors with Si Nx passivation”, IEEE Electron Device Letters, 40 (8), 1241-1244, 2019. Lodha, “Improved n-channel Ge gate stack performance using Hf Al O high-k dielectric for varying Al concentration”, Applied Physics Express, 9 (7), 071302 (2016). Lodha, “Low resistivity contact on n-type Ge using low work-function Yb with a thin Ti O2 interfacial layer”, Applied Physics Letters, 108 (10), 103507 (2016). Arehart, “Trapping effects in Si δ-doped β-Ga substrate” IEEE Electron Device Letters, 39 (7), 1042-1045 (2018). Lodha, “Enhanced Stability and Performance of Few-Layer Black Phosphorus Transistors by Electron Beam Irradiation”, Nanoscale, vol. Rajan, “β-Ga bi-layer dielectric”, Applied Physics Letters, 114, 212106, 2019. Lodha, “Impact of punch-through stop implants on channel doping and junction leakage for Ge p-Fin FET applications”, IEEE Transactions on Electron Devices, 66 (4), 1635-1641, 2019.


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